Intel and Micron announced today a new revolution: a NAND flash memory technology that is five times faster than conventional NAND.

For consumers this means that with the new flash memory, video, photography and other applications will be transferred in a matter of seconds.

Intel and Micron claims that the new high speed NAND can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds.

ONFI stands for Open NAND Flash Interface. ONFI is an industry working group that is dedicated to simplifying the integration of NAND Flash memory into consumer electronic products, computing platforms, and various other applications that require solid state mass storage.

In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.

This new achievement was announced in an era in which MP3s, USB drives, removable storage cards, cell phones—and an endless number of other applications where mobility, power consumption, speed, and size are factors—are moving to NAND Flash.

“The computing market is embracing NAND-based solutions to accelerate system performance through the use of caching and solid-state drives,” said Pete Hazen, director of marketing, Intel NAND Products Group.

Also, Micron Technology today announced that it is the first company to sample an 8 gigabit (Gb) single-level cell (SLC) high speed NAND product.