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IBM is working on the 32nm
microprocessor to reduce operating voltage and improve performance over the
45nm circuits, the company unveiled on Monday. In collaboration with six
partners (Chartered Semiconductor Manufacturing Ltd., Freescale Inc., Infineon
Technologies AG, Samsung Electronics Co., STMicroelectronics NV and Toshiba
Corporation), IBM announced they have managed to demonstrate an increased performance
and power consumption advantages in semiconductors by using the innovative “high-k/metal
gate” material.
“These early high-k/metal gate
results demonstrate that by working together we can deliver leading-edge
technologies that handily surpass others in the industry,” said Gary Patton, Vice
President for IBM's Semiconductor Research and Development Center on behalf of
the partnership. "Demonstrating this caliber of result in a
practical environment means that as our collective client base moves to
next-generation technology by using the 'gate-first' approach, they will
continue to maintain a significant competitive advantage.”
The company unveiled that the
improvements have been observed in HKMG evaluation circuits and test chips on
silicon manufactured at IBM’s semiconductor fabrication facility in Fishkill,
N.Y. and the technology now allows all partners to take customer engagements.
“The semiconductor marketplace
remains one of the most competitive in the world. Early market introduction
combined with strong product differentiation is critical to success,” said Dirk
Wrister, director of Process Technology at Freescale, in a statement.
"This early design and modeling work indicates that the high-k/metal gate
technology is going to deliver a significant product and performance
differentiation. These early results are a significant step in the
demonstration of high-k/metal gate viability in 32nm technology."
The high-k/metal gate idea was
first unveiled at the beginning of 2007, and it was presented as a way to
improve transistors’ performance. This innovation later led to the development
of the 32nm chip circuitry, which stands at the base of future technological
achievements, such as the 28nm technology or the 22nm technology, the company
said.
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